Atomic Layer Deposited Buffer layers Comparison for Super-Stable Inverted Perovskite Solar cells and Modules
With the great efforts of the photovoltaic community, hybrid organic-inorganic perovskite solar cells have reached unprecedented power conversion efficiencies (PCEs) as high as 25.7%. However, the biggest shortcoming is the instability of the devices. As a result, this study focuses on optimizing atomic layer deposition of SnOx/Al: ZnO and ZnO on top of PCBM in an inverted perovskite solar cell architecture. The p-i-n device design will be used, with a stack of Glass/ITO/PTAA/PFN-Br/Cs0.05FA0.81MA0.14PbI2.7Br0.3/PCBM/Buffer layer/ITO/Cu. We believe a comparison study of the buffer layers deemed necessary in identifying the ideal buffer layer for highly efficient and stable device. As a result of this optimization, the devices will function with improved stability. Furthermore, manufacturing on large modules demonstrates the feasibility of industrialization.
Status: Ongoing
Date of proposal: 31/05/2024
Start date: 01/12/2022
End Date: 06/12/2022
DOI:
Report:
Publications:
Used Instruments: UV nanosecond laser for ITO/glass substrate etching. Class A sun simulator for performance testing. Atomic Layer Deposition (ALD) system.
Experimental Technique: Atomic Layer Deposition (ALD) of SnO2 as a buffer layer. Spin coating of perovskite layer. Current-Voltage (J-V) characterization.
Experiment Description: The project aimed to optimize the buffer layer of perovskite solar cells by comparing atomic layer deposited SnO2 with spin-coated SnO2. The study involved fabricating devices with different SnO2 layer thicknesses and assessing their efficiency and stability.
Type Samples: Perovskite solar cells with ALD and spin-coated SnO2 buffer layers.
Sample Description: Devices with Glass/ITO/PTAA/PFN-Br/Cs0.05FA0.81MA0.14PbI2.7Br0.3/C60/Buffer layer/ITO/Cu structure. Different thicknesses of ALD SnO2 (23 nm, 40 nm, 60 nm).
Experiment Data Type: Efficiency data (PCE) for devices with various SnO2 thicknesses. Stability data under light soaking.
Characterization Technics: J-V characteristics measurement. Light-soaking stability testing.
Characterization Data Type: Performance data including efficiency, fill factor, current density, and voltage. Stability data under constant illumination.
Analyzed Data: Comparison of performance and stability between spin-coated and ALD SnO2 devices. Impact of SnO2 thickness on device efficiency and stability.
Main Targets Project: Optimizing the SnO2 buffer layer in perovskite solar cells. Evaluating the effectiveness of ALD SnO2 compared to spin-coated SnO2.
Main Achievements Findings: Demonstrated that ALD SnO2 with 60 nm thickness achieved a PCE of 13.85% and showed good light-soaking stability with a T80 of 614 hours. Observed a trend where increasing the thickness of ALD SnO2 improved device performance. Found that spin-coated devices generally showed higher efficiency than ALD devices, but ALD devices exhibited better stability.